2SC3097 GOOD-ARK
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Symbol Parameter Value Units VCBO Collector-Base Voltage 1350 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current –Continuous 1.5 A Icp Collector Current –Pulse 3 A PC Collector Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3097 TO-126 Plastic-Encapsulate Transistors 2SC3097 TRANSISTOR (NPN ) Storage Temperature -55-150 ℃
FEATURES
Power amplifier applications MAXIMUM RATINGS* TA=25℃ unless otherw ise noted TO-126 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Marking: NZP 2SC30 97 **** ELECTRICAL CHARACTERISTICS(Tamb=25 ℃ unless otherw ise specified) Parameter Symbol Test conditions MIN TYP M A X UNIT Collector-base breakdow n voltage V(BR)CBO IC=0.1mA,IE=0 1350 V Collector-emitter breakdow n v oltage V(BR)CEO IC=1mA,IB=0 800 V Emitter-base breakdow n v oltage V(BR)EBO IE=0.1mA,IC=0 V Collector cut-off current ICBO VCB=1300V,IE=0 100 μA Emitter cut-off current IEBO VEB=9V,IC=0 10 μA DC current gain hFE VCE=5V,IC=100mA hFE VCE=5V,IC=1.5A Collector-emitter saturation voltage VCE(sat) IC=0.5A,IB=0.2A 0.8 1.5 V Base-emitter saturation v oltage VBE(sat) IC=1A,IB=0.2A V Transition frequency fT VCE=10V,IC=100mA MHz Collector output capacitance Cob VCB=10V,f=1MHz pF Raise time tr μS Storage time tstg μS Fall time tf UI9600, Ic=0.5A 4 μS CLASSIFICATION OF hFE VCE=5V,IC=100mA Rank 24--35 Range
SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3097 Characteristic curve Secure w orking area ( DC ) Ptot～ T Relation curve HFE～ IC Relation curve VCES～ IC Relation curve VBES～ IC Relation curve
SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3097