2SC3092 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC3092
DESCRIPTION
- High Breakdown Voltage- : V(BR)CBO= SOOV(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 800 500 150 -55-150 UNIT V V V A A A W 1 PIN 1.BASE [X^ 2. BETTER rt 3. COLLECT OR (CASE) > TO-3 package tE A t . A N («- N-»j j i i ! n -JU-D JPL xT/k^x. / >slj_^X i c t "t-K i t G B _ i T i '~PH IIHIl MM MIN k'AX A 3900 B 2S.38 26.67 C 7,80 8.30 T 0.30 1 ID E t .40 1 .60 6 1092 H 546 JS\\0 13.50 L 16 7S 1705 N 19.40 1962 0 4.00 4 20 It 30 00 30 20 V 4 30 4 5U N.I Semi-Conductors reserves the right to change test conditions, parameter limits anil package dimensions xvithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of goini; to press. I luuever, N.I Semi-ConducUirs assumes no responsibility for anv errors or omissions discovered in its use. N.I Scnii-C'onduclors cncour:i»es customers In verily that dala.^lieets are current before placiny orders. Quality 5emi-Conductors
Silicon NPN Power Transistor 2SC3092
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified SYMBOL V(BR)CEO VcEO(SUS) V(BR)CBO V(BR)EBQ VcE(sat) VBE(sat) ICBO IEBO hpE-1 hFE-s COB ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 5mA; RBE °° IC=7A;IB= 1.4A; L=50uH lc= 1mA; IE=0 IE= 1mA; lc= 0 lc= 3A; IB= 0.6A lc= 3A; IB= 0.6A VCB= 500V; IE=0 VEB= 5V; lc=0 lc= 0.6A; VCE= 5V lc= 3A; VCE= 5V IE=0; VcB=10V;ftest=1.0MHz lc=0.6A; VCE= 10V MIN 500 500 800 TYP. MAX 1.0 1.5 UNIT V V V V V V uA uA pF MHz E-! Classifications L 15-30 M 20-40 N 30-50