2SC3092 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3092
DESCRIPTION
- With TO-3 package
- High breakdown voltage
- Fast switching speed.
- Wide area of safe operation
APPLICATIONS
- 500V/7A switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICP Collector current-peak PW≤300μs, Duty Cycle≤10% 14 A IB Base current 3 A PC Collector power dissipation T C=25℃ 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3092 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ; RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=3A; IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage I C=3A; IB=0.6A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 10 μA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE-1 DC current gain I C=0.6A ; VCE=5V 15 50 hFE-2 DC current gain I C=3A ; VCE=5V 8 COB Output capacitance I E=0 ; VCB=10V, f=1MHz 80 pF fT Transition frequency I C=0.6 A ; VCE=10V 18 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 3.0 μs tf Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50Ω 0.3 μs hFE-1 classifications L M N 15-30 20-40 30-50
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3092 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)