2SC3074_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC3074 ■ Features

  • Low collector saturation voltage
  • High speed switching time: tstg = 1.0 μs (typ.)
  • Complementary to 2SA1244 1 2 3 Unit: mm TO-251 1 2 3

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VCBO 60 VCEO 50 VEBO 5 IC 5 IB 1 Ta = 25°C 1 Tc = 25°C 20 TJ 150 Tstg -55 to 150 Emitter - Base Voltage Collector - Emitter Voltage Collector - Base Voltage Junction Temperature Storage Temperature Range Parameter PC W V A Collector Power Dissipation Base current Collector Current - Continuous ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150mA 0.4 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150mA 1.2 hFE(1) VCE= 1V, IC= 1 A 70 240 hFE(2) VCE= 1V, IC= 3 A 30 Turn-on time ton 0.1 Storage time tstg 1 Fall time tf 0.1 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 80 pF Transition frequency fT VCE= 4V, IC= 1 A 120 MHz V uA uS DC current gain V B1 = 0.15 A , IB2 = 0.15 A Duty cycle ≤ 1% 20 μs INPUT IB1 IB2 OUTPUT VCC = 30 V IB1 10 Ω IB2

www.kexin.com.cn2 Transistors NPN Transistors 2SC3074 ■ Classification of hfe(1) Type 2SC3074-O 2SC3074-O Range 70-140 120-240 ■ Typical Characterisitics VCE – IC VCE – IC IC – VCE VCE – IC Collector-emitter voltage VCE (V) Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) DC current gain hFE Collector current IC (A) Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) Common emitter Tc = 25°C 90 100 2 4 6 8 12 10 IB = 10 mA 1.2 Common emitter Tc = 25°C 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 150 100 80 500 300 200 IB = 10 mA Common emitter Tc = 100°C 150 100 80 500 120 200 IB = 10 mA 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 Common emitter Tc = −55°C 120 160 500 300 40 200 250 IB = 20 mA 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 hFE – IC VCE (sat) – IC Tc = 100°C Common emitter VCE = 1 V −55 1000 100 300 500 0.03 0.1 0.3 1 3 10 Common emitter IC/IB = 20 Tc = −55°C 100 0.1 0.3 0.5 0.01 0.03 0.05 0.03 0.1 0.3 1 3 10

www.kexin.com.cn 3 Transistors NPN Transistors 2SC3074 ■ Typical Characterisitics PC – Ta VBE (sat) – IC IC – VBE Collector current IC (A) Base-emitter saturation voltage VBE (sat) (V) Base-emitter voltage VBE (V) Collector current IC (A) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) Ambient temperature Ta (°C) Collector power dissipation PC (W) 0.1 0.03 Common emitter IC/IB = 20 100 Tc = −55°C 0.1 0.3 1 3 10 0.3 0.5 Common emitter VCE = 1 V −55Tc = 100°C (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 20 40 60 80 100 120 160 20 (1) (2) (3) 140 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C 30 100 3 10 0.3 1 0.03 0.05 0.1 0.3 0.5