2SC3072_05 TOSHIBA

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications

  • High DC current gain : h FE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : h FE = 70 (min) (VCE = 2 V, IC = 4 A)
  • Low collector saturation voltage : V CE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
  • High power dissipation : P C = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 50 V VCES 40 Collector-emitter voltage VCEO 20 V Emitter-base voltage V EBO 8 V DC I C 5 Collector current Pulse (Note 1) ICP 8 A Base current I B 0.5 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 40 V, IE = 0 ― ― 100 nA Emitter cut-off current I EBO V EB = 8 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 20 ― ― V hFE (1) (Note 2) VCE = 2 V, IC = 0.5 A 140 ― 450 DC current gain hFE (2) V CE = 2 V, IC = 4 A 70 ― ― Collector emitter saturation voltage V CE (sat) I C = 4 A, IB = 0.1 A ― ― 1.0 V Base-emitter voltage V BE V CE = 2 V, IC = 4 A ― ― 1.5 V Transition frequency f T V CE = 2 V, IC = 0.5 A ― 100 ― MHz Collector output capacitance C ob V CB = 10 V, IE = 0, f = 1 MHz ― 40 ― pF Note 2: h FE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450 Marking C3072 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code)

Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector current I C (mA) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage V BE (V) IC – VBE Collector current I C ( A ) Common emitter VCE = 2 V Tc = 100°C 0.4 0.8 1.2 1.6 −25 2.0 0.1 0.01 Common emitter VCE = 2 V Tc = 100°C 0.03 0.3 1 100 300 500 1000 −25 3 10 Common emitter Tc = 25°C IB = 10 mA 1 2 3 4 5 150 200 100 0.01 Common emitter IC/IB = 40 Tc = 100°C 0.05 0.03 0.1 0.3 1 0.1 0.3 0.5 −25 3 10 0.03 Collector current I C (A) Collector-emitter voltage V CE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C (W) (1) Tc = T a infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 (1) (2) (3) *: Single nonrepetitive pulse Tc = 2 5 ° C : Pulse width = 10 ms (max) Duty cycle = 30 ％ (max) Curves must be derated linearly with increase in temperature. 0.1 0.3 IC max (continuous) IC max (pulsed) DC operation Tc = 25°C 10 30 1 3 0.3 0.5 5 10 ms* 100 ms* 1 ms* VCEO max

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE