2SC3066 SANYO
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No..976B 2SC3066 NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL Amp APPLICATIONS Applications ff & “Sy? . Differential amp, current mirror ff @& “pO Features Ae a agg! oe « Excellent in thermal equilibrium and suited for uge invdirreréntial amp applications. if a “¢ . Matched pair capability. ff ere fe Absolute Maximum Ratings at Ta=25°C ar’ eee Collector to Base Voltage VoRo fe & “ 430 v Cellector to Emitter Voltage Vogq if ~~ | feo Vv Emitter to Base Current Yeo fg & “os. a é¢ 5 Vv Collector Current Io oe aw Sy "e 50 mA Peak Collector Current top ee es “Sip of 100 mA Collector Dissipation Po 1 unity” fie 200 mW Total Dissipation Pry “he we 400) owW Junction Temperature mee £%, fe 150 °c Storage Temperature Tstg Ry = o# +55 to +150 Blectrical Characteristies at Tat25°¢.” 9 fs min typ max unit Collector Cutoff Current /IgggSs. a Voge 80V, Tp=0 0.1 uA Emitter Cutoff Current ., Ippo Ss VgpF4V, I p20 0.1 uA DC Current Gain if hy; os Vog?6V,Ig=1mA 160* 960* DC Current Gain Ratio “hy ‘Beveall/sargoSVgg=6V, Ig= 1A 0.85 0.98 Base to Emitter Voltage Drop Wpgtiarte-oot iV ops6¥, Zee mA 1.0 10 mv Collector to Emitter © Wettsat)” Ig=10mA, p= 1mA 0.5 Saturation Voltage® O%& a ee Gain-Bandwidth Products" “Ady Vg =6V, Ip= ima 130 MHz Output Capacitance “Yop Vope10V, f= 1Miz | 1.6 pF a. |. eee Continued t . #:The 2503066" Js classified by -hgp(small) as follows: ° Oc OR HOXK Page [160_F 380 | F £320 [280 G 560°) 480 H 960 Case Outline 2029 2° ff Case Outline 20304 ee eed €c 8 VAN of £0 a) MOE: Emitter E: Emitter } \\ oc: Collector qa €: Collector G Ya: pase 4H B: Base ae SANYO :DP6A teas SANYO: DPOB ‘Specificetioris andrinformation herein are subject to changé without notice. SANYO Electric Co.,Ltd. Semiconductor Overseas Marketing Div. Natsume Bidg. 18 6, 2-chome, Yuehima. Bunkys *: TOKYO 113 JAPAN N207KL/ 2795K1,TS No.976~-1/2
Continued from preceding page. min typ max unit Collector to Base Breakdown V¢pr)cno Igzidua,Ipe0 130 v Voltage Collector to Emitter y To21mA, Rpg=0o 120 v Breakdown Voltage (BR)CEO C VES a. Baitter to Base Breakdown Viprygno ‘pe 10uA,Ig=0 Bem v
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2 ion 5 Pot i fad bef | /-|- | bee de ee oc Lilac g* a a a a i ott tell LLL so Lee | a ge & mivad va tI Collector to Emitter Voltage, Vop - if “Bite, to Boittér Voltage,Vag = Vo CT Spare PT) p Ee FRR E ff Ho, “Pad ble /> EEE aD roryerer ye SLIT © contester Curegnt iy, ~ mA ae °' "Collector Current,Ig = ak“ oS Coe VRS fd Pc - Ta ® I aan ? am «CeCe * Drees = vA —~ stot in qr a ep or sles eT fff] NI collector to Base Voltage, Von = v Ambient Temperature,Ta - °C Information furnished by SANYO is believed to be accurate and reliable. However, ao responsibility is assumed by SANYO for its use, nor for any infringements of patents or other rights of third parties which may rosult from its use, and no license is granted by implication or otherwisa under any patent or patent rights of SANYO. No.976~2/2