2SC3043 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
cSs.mi-Condu.cto'i t-Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC3043
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) :
- Fast Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 500 400 120 150 -55-150 UNIT V V V A A A W PIN 1. BASE 2. BETTER 3. COLLECT OR (CASE) TO-3 package i - 1 c DIM A e c D E _£_ H K L N Q U V nun MM KM 39.00 25.30 7.80 090 1.10 36.67 8,50 1 10 1.60 1092 546 '.1.10 1675 19*0 400 3000 430 13.50 1705 1962 420 3030 450 N.I Semi-Conductors reserves the right to change lest conditions, parameter limits ami package dimensions \\vithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ofgoinj. to press. I loweser. N.I Semi-Coiuliiclors assumes no responsihilils for an\\s or omissions discovered in ib n>e. N I Semi-( 'onduclors ciicourat;es eustomers to verily that datasheels ;nv eurreal hel'oiv placing orders. Quality 5emi-Conductors
Silicon NPN Power Transistor 2SC3043
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(sat) ICBO IEBO hpE-1 hpE-2 fj COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 10mA; RBE= °° lc=1mA; IE=0 IE= 1mA; lc=0 lc= 8A; IB= 1 ,6A lc= 8A; IB= 1 .6A VCB= 400V; IE= 0 VEB= 5V; lc= 0 lc=1.6A;VCE=5V lc= 8A; VCE= 5V lc=1.6A;VCE=10V VCB=10V;ftest= 1.0MHz MIN 400 500 TYP. 160 MAX 1.0 1.5 UNIT V V V V V M A M A MHz PF