2SC3042 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

^zmi-donductoi J loducki, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3042

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- ' V(BRK;EO= 400V{Min)
  • Fast Switching Speed
  • Wide Area of Safe Operation

APPLICATIONS

  • Designed for switching regulator applic ABSOLUTE MAXIMUM RATINGS(Ta=2! SYMBOL PARAMETER V,-n- Collector Base Voltage VOLG j Collector-Emitter Voltage VEEO 1 Emitter-Base Voltage Ir ' Collector Current-Continuous ir.N Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25 ( ' Collector Power Dissipation @ Tc=25< Tj Junction Temperature I ,tlj j Storage Temperature Range ations. 5'C) VALUE 500 400 UNIT V V V A 25 A 100 150 A W 55-150 i , 2 3 TO-:SPN package tu : i f i -• — B i*-Y /°c (•; -s ,' '•> il _*. _fi n T ij DIM A B LI E F G K K L N ij K S — • j j ££" b f. 0 ; 1 l i I i i |' - ' ' V rv fr'TT | ^iW^ j.. M \\m MIN 19.60 15.50 4,70 0,90 1.90 3.40 2.90 0.595 20 00 1.90 10.89 4,90 3.35 1.995 R QA MAX 20.10 15.70 4.90 1.10 ' *" 2.10 3.60 3,20 3.40 0,605 20.70 2,20 10.91 5.10 3.45 2.10CI ' Y 9.90 10101 \\ Sv,Miti-t iiiitliiLlni x ixx'rvijs die light Ui di;ingc lijsl aiiulilions. p:iraniL'lfi limiK ;iml p;n.k,ij;c itinici^inii^ \\iith<Hi( 'Semi-ConJuctors

Silicon NPN Power Transistor 2SC3042

ELECTRICAL CHARACTERISTICS

Tc=25"C unless otherwise specified SYMBOL PARAMETER VUI'ICK I Collector-Emitter Breakdown Voltage V BR.CBO Collector Base Breakdown Voltage V^p^m, 1 Emitter-Base Breakdown Voltage Vct.'sati Collector-Emitter Saturation Voltage i Vbtisati keo Base-tmitter Saturation Voltage Collector Cutoff Current lino ! Emitter Cutoff Current h.c , h.f- :• C3B DC Current Gam DC Current Gam Current-Gam — Bandwidth Product Output Capacitance Switching times tor tsig tf Turn-on Time Storage Time Fall Time CONDITIONS lr= 10mA. Rnr~ "• (r- 1mA, \\= 0 lt= 1mA; lc=0 I--8A, In- 1.6A lc= SA; lft= 1 6A Vt.u= 400V; lr= 0 VEB= 5V, lr= 0 lc= 1 6A VCE= 5V lc= 8A: VCE= SV |c= 1 6A; Vr,F= 10V Vce= 10V ftest= 1 OMHZ WIN 400 500 TYP, I lc= 10A, |e,= .|B?=2A. 160 MAX UNIT V V I V 1 0 V 1 5 V 10 |p A

10 I u A

10 ' MS 25 ! M s 10 u s

  • hfE-1 Classifications L 15-30 | M 20^0 N 30-50