2SC3041 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC3041
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 400V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Tc=25i: Junction Temperature Storage Temperature Range VALUE 500 400 150 -55-150 UNIT V V V A A A W 1 PIN 1. BASE [X^ 2. EMITTER r» 3. COLLECT OR (CASE) I TO-3 package r i i IE t f*- N-*j I — U r- x<r\\ , >x_ s • M^gg nun DIM WH \\ A 3900 B 25,30 26.67 C 7.80 8.50 D 0.90 MO £ t .40 1 .60 G 1092 H S4S K 1130 13,50 L 1675 1705 N 1940 1962 Q 4.00 420 U 30.00 30 20 V 430 450
- OH t > B I N.I Semi-Conductors reserves the right to change tost conditions, parameter limits anil package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going lo press. I lo\\\\e\\er. NJ Seini-Coiidiielors assumes no responsibility for an\\s or omissions discovered in its use. N.I Semi-Conductors encourages customers to serifs thai datasheets are eimx-nl before placing orders. Quality .Semi-Conductors
Silicon NPN Power Transistor 2SC3041
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(sat) ICBO IEBO hpE-1 hFE-2 fr COB PARAMETER Collector-Emitter Breakdown Voltage. Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 10mA; RBE= °° lc= 1 mA; IE= 0 lE=1mA;lc=0 |c= 4A; IB= 0.8A lc= 4A; IB= 0.8A VOB= 400V; IE= 0 VEB= 5V; IG= 0 lc= 0.8A; VCE= 5V lc= 4A; VCE= 5V lc=0.8A;V0E=10V VCB=10V;fies,= 1.0MHz MIN 400 500 TYP. MAX 1.0 1.5 UNIT V V V V V |J A U A MHz PF