2SC3041 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3041
DESCRIPTION
- With TO-3 package
- Fast switching speed
- Wide area of safe operation
- High breakdown voltage
APPLICATIONS
- For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICP Collector current-pulse PW≤300μs,Duty cycle≤10% 16 A IB Base current 3 A PC Collector power dissipation TC=25℃ 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3041 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=4A; IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage I C=4A; IB=0.8A 1.5 V ICBO Collector cut-off current V CB=400V; IE=0 10 μA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE-1 DC current gain I C=0.8A ; VCE=5V 15 hFE-2 DC current gain I C=4A ; VCE=5V 8 fT Transition frequency I C=0.8A ; VCE=10V 20 MHz Cob Output capacitance I E=0; VCB=10V,f=1MHz 80 pF
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3041 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)