2SC3040 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
10 ducts., {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3040
DESCRIPTION
- Collector-Emitter Breakdown Voltage- '•• : V(BR)CEO= 400V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 500 400 150 -55-150 UNIT V V V A A A W 1 2 3 PIN 1.BASE 2.COLLECTOR 3-EMITTER TO-3PN package —- C • DIM A B C D E F G H J K L N Q R S u y mm WIN 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.00 1.90 10.89 4.90 3.35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2.100 6.10 10.10 N.I Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be hoih accurate and reliable al the time of iioi lo press. I loue\\er. N.I Semi-ComliicUirs assumes no responsibility lor an> errors or omissions discovered in its use. N.I Semi-Coiuluclors eiicuurai'cs customers In \\erily thai datasheets are cunvnt before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC3040
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VsE(sat) ICBO IEBO hpE-1 hFE-2 fr COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 10mA; RBE= °° IG= 1mA; IE= 0 lE=1mA; lc=0 lc= 4A; IB= 0.8A lc= 4A; IB= 0.8A VCB= 400V; IE= 0 VEB= 5V; lc= 0 lc= 0.8A; VCE= 5V lc= 4A; VCE= 5V lc=0.8A;VCE=10V VCB=10V;ftes,= 1.0MHz MIN 400 500 TYP. MAX 1,0 1.5 UNIT V V V V V U A pA MHz PF Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc= 5A, IB1= -IB2= 1A; RL= 400 ; VCC= 200V 1.0 2.5 1.0 p s u s p s
- hpE-1 Classifications L 15-30 M 20-40 N 30-50