2SC3040 SANYO

Document overview

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Technical content

Features

+ High breakdown voltage( Von q2500V) + Fast switching speed. + Wide ASO, Absolute Maxinmm Ratings at Ta=25°C unit Collector-to-Base Voltage Vong 500 Collector-to-Emitter Voltage Voro 400 v Emmiter-to-Base Voltage VeRO 7 OV Collector Current Ig 8 A Peak Collector Current top PW$300ps, 16 A Duty Cycle<10% Base Current I3 3 A Collector Dissipation Po 2.5 W Te=25°C 80 OW Junction Temperature Tj 150 Sc : Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo VoweeyOvsta=0 10 pa Emitter Cutoff Current Tb Vpp=oV eI ge * _ pA DC Current Gain neett) Vog=5V,Ig=0.8A 5 5 hpp(2) Voge 5V, Ige4a 8 C-E Saturation Voltage Vog(sat) Ic=4AsTg=0.8A 1.00 B-E Saturation Voltage VpE(sat) Ic=44,Tp=0.8A 150 OV Gain Bandwidth Product —f'p Voge 10V,1g=0.8A 20 Miz Output Capacitance Cob Vopr 10V, f= 1MHz 80 pF C-B Breakdown Voltage Veprycpo Ic=imA,Ip=0 500 M C-E Breakdown Voltage V(BR)CEO Ton ont BBO 400 v E-B Breakdown Voltage Vopr)epo Tg=1mA, Ig 7 v C-E Sustain Voltage Yor0(sus) Ig=8A,1,=1.6A,L=50pH 400 Vv C-E Sustain Voltage Vorx(sus) Zc=84,Tp7=1-64,L=200nH, 400 v oR Ipo=-1-64,clamped C-E Sustain Voltage V, EX(sus) Ig=1.5A,1p,50.3A,L=200pH 450 v RY Igo=-0.3A, clamped *: Th Continued on next page. . el. Pre 1) of the 28C3040 is Package Dimensions 2022 assified as follows. When (unit: mm) Specifying the hpe(4) rank, no Specify two ranks or more in L, 4.0 principle. 6 pe BE (5b 30 [20 w WOT 30_N 50] 82 0° ee" Tg 15.0 20.0 —+ 1 . E: Emitter - ¢: Collector’ SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN AANTKI/3095MW ,TS No.997-1/3)

25¢3040 : Continued from preceding page. min typ max unit Turn-ON Time t, Ig=5A,Ipy21A,Ipo=-1A, 1.0 ps oP RE slhOohms ; Vgg2 050 Storage Time tstg " : ae ps Fall Time te " . ps Switching Time Test Circuit PWe?0us IB1 Joes U% in Pe ° whi () RL LS) we aye Vge=-5V Vec=200¥ Slpi=~-5ip2 = Ic Unit (resistance: 9, capacitance: F) oT Te [Rie < Fe ee ee TLE PEEP PT ey | | Ae Te er oe Looafoomn zoe] BP [eT 2 1 pa 3 Zoo ee 3 === st | Cee eE Zan a= FS Ae ee n/a eS ch 2 eee | Ky) oe a ss Ft} jl | ot _| | | [ [esol TT] oL_l | eof TT Collector -to-Eaitter Voutage, Yop - q Collector-to-Emitter Voltage, Von -VvV ‘ Ic - VBE hre - I¢

1 Vop=5v

<; + ot ET TTT ise ' By Tips oe TTT TTT ef LL TY 2 Eee oo ry an an [| S SEE ese FPN ee] gs 8 Seer ores BECCA 4 RCo ee i NN Sl TL UPA) eo Bz i 3 COO 3 | PA ft a 5! Wy oA At AA ae ce ° O2 04 0.6 0.8 1,0 42 ba 6 001 0.4 10 Ls . Base -to-Emitter Voltage, Vor -Vv Collector Current ,I¢ -A- a> v . > VBE(sat) - Ic Sy ce(sat) - I¢ Se wo — oO UM ees) 2 PTO Oy] 2g Cee

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a A se Hr | 8 os Zag 3 po et a i Reet 2 Spree SS a 0.01 Se Od TO eos 10 EI 0.01 a 2 0 10 Collector Current Jc = AS . Collector Current,I¢ -A . —_____Gellector CurrentyIg’"A; Collector CurrentIg = A No.997-2/3

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