2SC3040 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3040
DESCRIPTION
- With TO-3PN package
- High breakdown voltage (VCBO 500V)
- Fast switching speed
- Wide ASOSafe Operating Area
APPLICATIONS
- 400V/8A switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 3 A Ta=25 2.5 PC Collector power dissipation TC=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3040 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;RBE== 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current V CB=400V ;IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE-1 DC current gain I C=0.8A ; VCE=5V 15 50 hFE -2 DC current gain I C=4A ; VCE=5V 8 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 80 pF fT Transition frequency I C=0.8A ; VCE=10V 20 MHz Switching times ton Turn-on time 1.0 µs ts Storage time 2.5 µs tf Fall time IC=5A IB1=-IB2=1A RL=40D,VCC=200V 1.0 µs hFE-1 classifications L M N 15-30 20-40 30-50
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3040 PACKAGE OUTLINE Fig.2 outline dimensions
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3040