2SC3038 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3038
DESCRIPTION
- Collector-Emitter Breakdown Voltage-' : V(BR)CEO= 400V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Tc=25"C Junction Temperature Storage Temperature Range VALUE 500 400 1.5 150 -55-150 UNIT V V V A A A W » '- : • PIN ; I I 1.BASE 2. COLLECTOR 3.BUIITTER TO-220C package MS' U 1 - B H f V ...j— 1 K T 1) He f C A r DIM A B C D F G H J K L Q R s U V -*• ... mm MEN 15.50 9.90 4.20 0.70 3.40 4.98 2.6S 0.44 13,00 1.20 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 r — | N,l Scmi-t'oiiCluctors rcstrvcs the right to change tost conditions, parameter limits and package dimensions uithout luiiice. Information furnished by N.I Semi-Conductors is believed lo he both accurate inul reliable at the time ot'yoiiu; to press. I lo\\\\e\\er. N.I Semi-Conductors assumes no responsibility lor any errors or omissions discovered in its iisc." Nl Semi-l'ondnetitrs encuiir;)!.;es cnslomers lo \\erily thai datasheets are ciinvnt helbtv placing orders. Qualify -Semi-Conductors
Silicon NPN Power Transistor 2SC3038
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcEO(SUS) V(BR)CBO V(BR)EBO VCE{sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 fi COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 5mA; RBE= °° lc= 20mA; IB= 0 lc=1mA;lE=0 lE=1mA;lc=0 lc= 2A; IB= 0.4A lc= 2A; IB= 0.4A VCB= 400V; IE= 0 VEB= 5V; lc= 0 lc= 0.4A; VCE= 5V lc= 2A; VCE= 5V lc=0.4A; VCE= 10V VCB=10V;ftest= 1.0MHz MIN 400 400 500 TYP. MAX 1.0 1.5 UNIT V V V V V V MA u A MHz PF Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc= 3A, IB1= -IK= 0.6A; RL= 66.6O ; Vcc= 200V 1.0 2.5 1.0 M s |J S M s
- hpE-1 Classifications L 15-30 M 20-40 N 30-50