2SC3038 SAVANTIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3038

DESCRIPTION

  • With TO-220C package
  • High breakdown voltage : VCBO=500V(Min)
  • Wide area of safe operation
  • Fast switching speed

APPLICATIONS

  • 400V/4A switching regulator applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICP Collector current-pulse PW 3300µs,Duty cycle310% 8 A IB Base current 1.5 A 1.75 PC Collector power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3038 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ; RBE=A 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=2A; IB=0.4A 1.0 V VBE(sat) Base-emitter saturation voltage I C=2A; IB=0.4A 1.5 V ICBO Collector cut-off current V CB=400V ;IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE-1 DC current gain I C=0.4A ; VCE=5V 15 50 hFE-2 DC current gain I C=2A ; VCE=5V 8 fT Transition frequency I C=0.4A ; VCE=10V 20 MHz COB Output capacitance f=1MHz ; V CB=10V 40 pF Switching times ton Turn-on time 1.0 µs tstg Storage time 2.5 µs tf Fall time VCC=200V; IC=3A IB1=0.6A;IB2=-0.6A; RL=66.6F 1.0 µs hFE-1 Classifications L M N 15-30 20-40 30-50

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3038 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)