2SC3012 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
<^£.mi-Cond\\j.(itoi L/^r , O na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3012
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo=130V(Min)
- Good Linearity of hFE
- Complement to Type 2SA1232
APPLICATIONS
- For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM PC Tj •• Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 130 130 100 150 -55-150 UNIT V V V A A W r 1 2 3 PIN 1.6ASE 2.COLLECTOR 3. BETTER TO-3PN package M'-7' \\< ^J H"~" " t ' : G •*• —L DIM A B C D E F G H J K L N q R s u V mm WIN 19.60 15,50 4.70 0.90 1.90 3.40 2,90 3.20 0.595 20.00 1.90 10.89 4.90 3,35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2,20 10,91 5,10 3.45 2.100 6.10 10.10 NJ Senii-Coiitluctors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is helie\\ed to he holh accurate and reliable at Ihe time of going ID press. I loue\\er. N.I Semi-Conductors assumes no responsibility lor an\\s or omissions discovered in its use.' NI Semi-C'diiduclors eiicuimijies customers lo verily that dulasheels are current be lore placiuy orders. Qualify Semi-Conductors
Silicon NPN Power Transistor 2SC3012
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcE(sat) VBE(sat) ICBO IEBO riFE-i hFE-2 COB fr PARAMETER Collector-Emitter Saturation Voltage ' Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 5.0A; IB= 0.5A lc= 5.0A; IB= 0.5A VCB= 130V; IE=0 VEB= 3V; lc= 0 lc= 2A; VCE= 5V lc= 5A; VCE= 5V IE= 0; VCB= 10V; f= 1.0MHz lc= 1A; VCE= 5V MIN TYP. 150 MAX 1.5 2.0 320 UNIT V V MA MA PF MHz
- hfE-1 Classifications R 60-120 Q 100-200 P 160-320