2SC3011 TOSHIBA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm +08 25703 e = High Gain : [So1el?=12dB (Typ.) +0.25 15=0:15. a e Low Noise Figure : NF=2.3dB (Typ.), f=1GHz rH 33 i +3 © = High fp : fp=6.5GHz 4 a7] E a) 3 He al 3 3 MAXIMUM RATINGS (Ta = 25°C) | H CHARACTERISTIC SYMBOL | RATING | UNIT Collector Base Voltage Von0 . 3| Collector-Emitter Voltage VcEO ad *4 Emitier-Base Vollage Veno | 3 | V_ ‘| z Collector Current E Emitter Current i Collector Power Dissipation Po [150 mW 2 EMITTER Storage Temperature Range —55~125 JEDEC — Marking EIAJ SC-59 TOSHIBA 2-3F1A

3 Type Name 7

=a, Weight : 0.012g MICROWAVE CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rye. [max.[unrr] Transition Frequengy Von=8V, Ig=T0mA [= es — [om aie _|VeR=5V, 19=10mA, F=1GHa_| — | 12] — | ae | Von=5V,I¢=5mA, f=1GHe | — | 23[ — | ab | 961001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-10-28 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current IcBO VcB=10V, Ip=0 | — | — | 10] pA | Emitter Cutoff Current | tgpo | VgB=1.0V, I¢=0 b= p= ptf a] Collecter-Emitter Breakdown vanes fecvnninee | =] —[- [| DC Current Gain VoE=8V, ig= mA | 30 | a0 — | — | Collector-Emitter Saturation Vv 01 Voltage CE (sat) |1¢=10mA, Ip=1mA : v Base-Emitier Saturation Voltage [= post — | Collecter Output Capacitance VcB=5V, Ip=0, [| — | 07] 089] Reverse Transfer Capacitance f=1MHz Wote)[ — | 05] — | Input Capacitance Vep=0, 19-0, fim | — | 02] — [oF | (Note) Cre is measured by 3-terminal method with Capacitance Bridge. 1998-10-28 2/4

brE — Ic an Cob, Cre — VCB “COTM [TAM = TT | 2e f=1MH: és ° £ 88 Ta=25°C EE eT 7 nn ° es ee FS < Fee as & opi Se oss at LEH B SCO ei gs eT 2 of LT TTT ee of 1 TI Til B30 ES 0.3} PZ

2 LLU TUTTE & LTT TT

z Vor=5v Ba Ta=25°C Er 10 38 ool 0.3 1 3 10 30 SB 01 03 1 3 10 COLLECTOR CURRENT Ic (mA) COLLECTOR-BASE VOLTAGE Vcp (V) 30) ver T TUT TI BO a = 12 f=1GHz _— = 3S IN Ig=10mA

3 Tan 260 pea 3 NI C= 10m

© aul « N Ta=25°C

3 A "2 od NI

: 4 LUT TENT

2 LOY Tf E ih

2 | f| g N e LMI TT : 5 % 3 # A ; 03 1 3 10 30 0.03 01 0.3 1 3 COLLECTOR CURRENT Ig (mA) FREQUENCY f (GHz) NF - Ic NF -f 6 6 verry TM nin, f=1GHz Ig=5mA 8 merase LEM g TUTE ETT men25 & | & 4) ae : 3 2 } g tL 2 e IN Er e TIT | CU] | SAL | Seat g 2 P MM TT) LT IT {LIME TUTTI 1] EUUI LTE | 3 1 3 10 30 0.03 OL 0.3 1 3 COLLECTOR CURRENT Ic (mA) FREQUENCY f (GHz) 7998-10-28 3/4

VcE=5V Ic=10mA Size Ta= 25°C VoE=5V (UNIT: 0) Io=10ma 35 ma Stipe w [HY 1292 {_| BOSS ey Se SEER 19 ey, L¥ CH! <> ox ee, eae Rene ALES. LY sesso by 30" [HEE TS LESSEE LES nese Le _ HR es SSSR ES SANS Eee | SRE —j260 CSR Lt SO SBR SEES SEES ” -120 LO" Sate ~ ieriana So20 a= 25" CE=5V Ic=10mA SEER od soled Coe ALR a Oo PERN ESOS RESELL TDEERRSS iWeceemane PRR ESS LO +180 HEY <€eEH LEER EE A250 XL , Fo Ca SEE” SAS Bi | . ZTE? SCR SEES? Se “ ROTH TES = 907 LH A Z100 7998-10-28 4/4