2SC2996

2SC2996 TOSHIBA

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 6

Technical content

TOSHIBA 25C€2996 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FM/AM, RF, MIX, LOCAL, IF Unit in mm HIGH FREQUENCY AMPLIFIEP APPLICATIONS 405 25-03 +025 i.5-0.15, wl e High Stability Oscillation Voltage On FM Local Oscillator FH Ss 1" $7 @ Recommend FM/AM RF, MIX, Local and IF 4 27] 3 s] | = gq | 3 MAXIMUM RATINGS (Ta = 25°C) a EF CHARACTERISTIC | SYaIBOL Collesior Base Voltage voso | [Vv i} 13 Collector-Emitter Voltage Vcco | 30 | V | af Fe Emitter-Base Voltage VEBO ° Collesor Current i Junction Temperature 3. COLLECTOR Storage Temperature Range —55~125 JEDEC 10-236 Marking TOSHIBA 2-3F1A pe Name : hpg Rank Weight : 0.012g 1 2 961001544 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as sat forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-10-28 1/6

TOSHIBA 25C€2996 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo |Vcp=40V, In=0 | — | — [0.1] pA | Emitter Cut-off Current Tmpo___|VEB=4V, Ic=0 [| — [| — | 05[ ZA | ‘ hE = = Reverse Transfer Capacitance Vcop=6V, f=1MHz | — | 09] 1.2] pF | Transition Frequency Vor =6V, Ig=—imA | 160, 350] — | Mn . , | VCE=6V, Ip=—1mA, Collector-Base Time Constant Cg. rbb’ £=30MHz 15 f=100MHz igh | — [15 [ — | a | Oscillation Output Voltage Von=6V, f=100MHz (Fig.2) | — | 150] — | mv | (Note) hyp Classification R : 40~80, O: 70~140, Y : 120~240 Fig.1 NF, Gpe TEST CIRCUIT 6pF, OUTPUT INPUT 0.01yLF 500 500, 1000pF| ce fi p: fy L1 a 4 12 (5 4 a = I 5 1000p 2° 3S 0.02uF i 0.0240 ae Vi ah v6 (dg=- Fn) Lj : 0.8mm¢ SILVER PLATED COPPER WIRE, 4T, 10ID, 8 LENGTH Fig.2, Vosc TEST CIRCUIT 10k v, 5pF 3 T fe S Ey Fy 15pF seg. te P’9 OUTPUT om [RS 10kQ no BS:

4 Is y

Ly : 0.8mm¢ SILVER PLATED COPPER WIRE, 4T, 10ID, 8 LENGTH 1998-10-28 2/6

STATIC CHARACTERISTICS 300 bre - Ic » Aa [LLL] convo snares q See ee tir A Vor=6v © CPPPREE PVP Teer) 2 Baillll Yorsev Schack EEM Pee EEE P= e Peeeh CAO: “SS a S a a A ef so f FE & sop} tT Pri rn Pa ON Tp oe s | i = z se oe rr] 8 wl LTT TE

2 COO AH: PT PE

8 [Ty yyy Tn‘ Etna eee ee [| COLLECTOR EMITTER On 03 0.5 1 3.5 10 CHF TT rr,, « ee eee Cie, gie - Ie ree e, comm | TT TTT LO errs mt st aa CEP Er 33 - Lite VY LTT TTT] # 6 101 — soot oo af ae a a A oF A A | Za 25 5 Lee 83 ie 4 8 3 }—| tt COMMON EMITTER eee ae Wi £=100MHz a8 / Te=25 L Z 03-051 “3-5 10 EMITTER CURRENT Ig (mA) 50 500 Coe, Boe — IE 1 lyrel, @re — TE _ “Leonor eum | | 1] III . os & Q VcE=6V ° oS a s + f=100MHs ~ Z a ° ° Ta 26°C 2 = oo eee SF iol = s00| 7 Lt iii g* ef Tiveel TT TT TTT e fF 8 PP ea ee | Zz Zz A 82-37 E08 COMMON EMITTER - st & soft a =e ~ ail Vor=6v Bsr 6 LA aT 8 z vere ey é of LTE Ae TT 83 47 = 100M Bers “eT THI ze | noe 5 5 A <é —100 2 oa E 2 — L___- Bz a Ue 218 wet Cleil] #2 fa Ft eratti ‘ OT -sol os LLL EMITTER CURRENT Ig (mA) EMITTER CURRENT Ig (mA) 1998-10-08 3/6

Cib, gib — IE <s np tl 7100 00 re ee a A Hy + = = = gq |COMMON BASE eran aa 1007 100 Ee Aa : q fone ai = a a a | AHHH g wees J © rg eon A g°7 g Siero > Amul = - a z 8 sol = q 30 ae Y 7 anil Z z | } se le. LL PTE HG os Zs Y Wyre s E / | il| 3é 2 J, (| COMMON EMITTER 5 “10 5 0 ae a : tio 2 z ee) | IH H 2 “" « a [4 {iT PaaS Saft timers . ‘ ae aw EMITTER CURRENT Ig (mA) EMITTER CURRENT Ig (mA) - . : . _ a - Fes

20 COMMON | Ly 3 vop=6v eat

: : é 0 = 50 |f=100MHz 7 \\ 1] a | a | oe ) ull i & Vcop=6V SHA 2 E ftom y HH g Wr gio f=100MH2 1A 38 ban : ii Pipe wi Bela On s Fs bly Zot | Z st gm EH A se ba Kt Het E 8 LUI ZC FE a > it Sanna a z 2 z — Ty - 5 He LC anil ae = 10 Coo FH HH =: gm [A Se ee oH a fost) «|e “Pe “ESE [Tt E : iS il E é £ eet PLE CTU ce LUT ze j coer . “ ae ae “ EMITTER CURRENT Ig (mA) -03 -05 =: EMITTER CURRENT Ig (mA) . — = : Lew | | lyrb|, rb anil - —__ wien , [TT rr ta _ B — feommon nase |r g2 ‘o en : : : ‘ Hi 2 “4 eS aS Ss a : : om aan 5% a | : ; car LUT ° en | E-v00} F 05 |p-toomee t TA : = HH =a wal g Z 5 [FH 4 5 a y Ce ott ell ‘| ge of | ee : i = = E f=100MHz ppt @ tee BE a ae te EE OE | z a KEFH 0S ee , | . : * LEH a \\ ; (Vv) ” - aw a COLLECTOR-EMITTER VOLTAGE VcE “EMITTER CURRENT Ig (mA) 1998-10-28 4/6

100 Coe, Soe — VCE 100, 100 |e Ste - Vcr

10 _ es — CY fe comm enrrrer g ee fF EEF Fie tma Sots tes =1ma ee ee = solo gg -w0lE s0 ¢=100Mte di or a Ta=25°C Eas} as — ef WEA E |e. iL | gE 16 [> se |e = 5 — [~~ I og ae 2 |8 ~—SUTT — as fe { TTT ae | - Le (1 Bol wl B 1b 8 wbH-—— [—— Pe ee ° ° SS OO | ae EHH J ost) sD et a “ 1 3 5 10 30 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER VOLTAGE Voge () Vce (Vv) - Cib, sib — VCB 1 rel foe NOE =10 a9 ——— Ci a —a g [——T} p= tma | g a oI e £ csp ee g- og EPs tit é @ tH Ta=25°C B 300, 29 os| {HT I gol 8a |—ewf Hr z e& COMMON Zz {| Pa E- al EMITTER = cS

2 Z£ Ig=-1mA g 5

Ze Ta=25°C 5 3S <@ 8 5 ee} 3 3 z ee EI Zz a SS EE a ee ee ee ee | oad a a 100 oos___L 1 TTTTHT T) -5 5 pt tt “1 3.8 10 30 COLLECTOR-EMITTER VOLTAGE COLLECTOR-BASE VOLTAGE Vor () Vop (V)

100 Cob, Bob — VCB 100 |yfbl, St - Ves

10 as | . g EEE) common pase = og FE common pase g a © BEG enim 2 ee gf E K-44 f= 100MHe 8 § ge 3g Zz < Bok Bw tew U ef LU - 3 g 30 SU SE 00 gE 90 Tal es |) SE ze fe 5 ea ge | 2 PU E Wil} IE i & ° 1 co 10 a NS — ee rok 10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE COLLECTOR-BASE VOLTAGE Vos WW) Vos (WV) 1998-10-28 5/6

TOSHIBA 2$€2996 os lyrb|, re — VOB 16 Yie-f - g CTI TI _ {200M ‘woo oa TTT E a g-000 £ oa} Sot ttt ry ee Ss A. . A ee fas 2 LITT TTT | se Bs Eos Z ae 23 8 LIT a COMMON EMITTER ge -100f © oa (2 8 LY] vceeev a8 a ES tea 5 4 ana Te=—1mA 28 a -—— f1o0nte z RH Ta=25°C -50l 0.05 LT ~ o o 2 4 6 8 OW eee TAGE INPUT CONDUCTANCE gig (mS) Ye — f FORWARD TRANSFER CONDUCTANCE Yoe — f 0 8 rae’ 32 40 _ common EMITTER | |_| [f=s00Mit | se “| common eumrrer [| mah ftom a Vor=6V id a = 1600 ge —mA Penn 2 VoE=6V 750 g f Z Pa < } BE | A oe 2 eaaaeeeeeee 2” 20 Y oe” se eee eeee eee OTT ET je EEE EEE . 0 10 20 30 40 50 60 OUTPUT CONDUCTANCE go¢ (uS) Yre ~ £ Pc — Ta REVERSE TRANSFER CONDUCTANCE gre (uS) 180 -200_=160_ = 120-80 = 99 2 TTT TTT PPT TTT yy ri] i] p| 2 g wop tL Tt TT tty tt Tt | 2 ee oe eee POPCCCET ea i CESS 7 a, 28 [TTP INET PCCCC ey) ERENT J ge se (TT TT TINT TTT TT Le ms? ENE Pope | EEEEEEEPN EE | Ee] 3 a Pipe Pe ry yy iNet PCE mt ERAN oL LTT TTT T TIT TiN | 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta (°C) 1998-10-28 6/0