2SC2982_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2982 ■ Features

  • Low saturation voltage
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1314 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 10 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse (Note.1) Icp 4 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 10 mA，IB= 0 10 Emitter - base breakdown voltage VEBO IE= 1mA， IC= 0 6 Collector- Base cut-off current ICBO VCB= 30 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=50mA 0.2 0.5 Base - emitter saturation voltage VBE(sat) IC=2A, IB=50mA 1.2 Base - emitter voltage VBE VCE= 1V, IC= 2A 0.86 1.5 VCE= 1V, IC= 0.5A 140 600 VCE= 1V, IC= 2A 70 140 Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 27 pF Transition frequency fT VCE= 1V, IC= 0.5A 150 MHz DC current gain hFE V V uA ■ Classification of hfe(1) Type 2SC2982-A 2SC2982-B 2SC2982-C 2SC2982-D Range 140-240 200-330 300-450 420-600 Marking SA* SB* SC* SD*

www.kexin.com.cn2 Transistors NPN Transistors 2SC2982 ■ Typical Characterisitics Ambient temperature Ta (°C) Collector power dissipation PC (W) Safe Operating Area Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) hFE – IC DC current gain hFE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) 4.0 3.0 2.0 1.0 0 1.0 2.0 3.0 4.0 IB = 5 mA Common emitter Ta = 25°C 25 60 1000 500 300 100 0.01 0.03 0.1 0.3 1 3 10 Ta = 100°C −25 Common emitter VCE = 1 V Common emitter VCE = 1 V Ta = 100°C 4.0 3.2 2.4 1.6 0.8 −25 0.01 0.03 0.1 0.3 0.5 0.3 0.1 0.05 0.03 0.01 1 3 10 Common emitter IC/IB = 40 Ta = 100°C −25 PC – Ta 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 1.45 0.01 0.1 0.5 0.3 0.1 1 0.3 3 30 10 100 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 100 ms* 10 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max