2SC2982 KEXIN
Document overview
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Technical content
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:V CE(sat) =0 . 5 V( m a x )( IC =2 A ,IB =5 0 m A ) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO 20 V Collector-Emitter Voltage V CEO 10 V Emitter-Base Voltage V EBO 6V Collector Current (DC) I C 2A Collector Current (Pulsed) *1 I CP 4A Base Current (DC) I B 0.4 A Base Current (Pulse) *1 I BP 0.8 A PC 500 PC *2 1000 Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 *1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max) *2 Mounted on a ceramic substrate (250 mm2 x 0.8 t) Collector Power Dissipation mW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = 30V , IE =0 0 . 1 A Emitter Cut-off Current I EBO VEB =6 V,I C =0 0 . 1 A Collector-Emitter Breakdown Voltage V (BR)CEO IC = 10mA , IB =0 1 0 V Emitter-Base Breakdown Voltage V (BR)EBO IE =1 m A,IC =0 6 V VCE =1 V,I C = 0.5A 140 600 VCE =1 V,I C = 2A 70 140 Collector-Emitter Saturation Voltage V CE(sat) IC =2 A,I B = 50mA 0.2 0.5 V Base-Emitter Voltage V BE VCE =1 V,I C = 2A 0.86 1.5 V Transition Frequency f T VCE =1 V,I C = 0.5A 150 MHz Collector Output Capacitance C ob VCB = 10V , IE =0,f=1 M H z 2 7 p F DC Current Gain h FE
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves 2SC2982 hFE Classification Marking Rank A B C D hFE 140 240 200 330 300 450 420 600 S