2SC2982 TOSHIBA
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 4.6max 1.pMax vax nazo0s | e High DC Current Gain and Excellent hpg Linearity : hpg (2)=70(Min.), 140 (Typ.) (Von=1V, I¢=2A) st +0.08 — 5 © Low Saturation Voltage 9.45 ~0.05 Bs +008 || +0008 : VCE (sat) =0.5V (Max.) (Ig =2A, Ig=50mA) 4-005. A= 15201 1540.1 e Small Flat Package e Pc¢=1~2W (Mounted on Ceramic Substrate) 123 1. BASE 2. COLLECTOR (HEAT SINK) MAXIMUM RATINGS (Ta = 25°C) 3. EMITTER. ‘ mo CHARACTERISTIC SYMBOL JEDEC = Collector-Base Voltage VcBoO. [30 | v | EIAT SC-62 colleson-Bmiter Va [Vous | 80 |v |[rosnipa—2-oxia —“s | Voro [10 |v | Weight + 0.055 Emitter-Base Vol | vaso | 6 | v | mitter-Base Voltage EBO MARKING Eo type N Collector Corent puke Nowe | top |__| vee Name a re Bace Current [Pulse(Notel) | Ipp | 0.8 _| | A“ Callecior Power Dissipation TTT Collector Power Dissipation 1000 Junction Temperature Storage Temperature Range —55~150 Note 1: Pulse Width=10ms, Duty Cycle=30% Po* :28C2982 Mounted on Ceramic Substrate (250mm? x 0.8t) Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical sensiity and vulnerability to physical stress. isthe responsibilty of the buyer, when utiizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating. ranges as set forth in the most recom products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION foF any Infringements of intellectual property or ther rights of the thifd parties which may result from Is use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-06-27 1/3
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | aa. | rye. [wax. [unr] Collector Cut-off Current Icpo__| Vop=30V, Ig=0 [ — | — [100 | na | Collector-Emitter _ _ Emitter-Base hyg (1) - = Worst tor 008 “ |= | | DC Current Gain wm [vomwieses fm [| — | Collector-Emitter = = Saturation Voltage CE (sat) | 1C=2A, 1B=50mA | — | 02 | 05 | Vv Base-Emitter Voltage Won=1V, 1g=2A [= [oss [as Tv vecsecems [= [ve ~ [om Collector Output _ fe vac neecomm [=| [=| Note2 : hyp (1)Classification A : 140~240, B : 200~330, C : 300~450, D : 420~600 1997-06-27 2/3
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ae } TE a | ba rT td ee LT 5 Terre gS (SS ead a Beck 56 “Eee | 3 eur stil Ci) = ® “COI 8 0.01! jor 00 oa as LL) | i tt | COLLEECTOR CURRENT Ig (A) ° 04 08 120 16 20 BASE-EMITTER VOLTAGE VgpgE (V) SAFE OPERATING AREA 2 4 Te HAK. CONS med tome ETT g 1 g 7 SuN COO 2 EEF] Snowe ov oman ° | | N (HH YT © 19) SUBSTRATE (250mm?x0.8t) TEESE ANOC oreramioN sy — i j to t+4 @ NO HEAT SINK Ee 2 Ree a a a | . 2 | ES 2 os| B os IN 8 % SINGLE | | 28 g sosmepenmve\\ | TT 2 of t+ NO Soa] PULSE Ta=25°C oa ae 2 Nee
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COLLECTOR-EMITTER VOLTAGE Vcg (V) AMBIENT TEMPERATURE Ta (0) 1997-06-27 3/3