2SC2981 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
<^£.mi-Conau.(itoi ^Product*., One,, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2981
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCE0(Sus)= SOOV(Min)
- Collector-Emitter Saturation Voltage- :VCE(sa.)=1.0V(Max)@lc-2A
- Fast Switching Speed
APPLICATIONS
- Designed for high-voltage, high-speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation @ Tc=25t Junction Temperature Storage Temperature Range VALUE 900 800 100 150 -55-150 UNIT V V V A A A W V-. PIN 1.BASE 2.BUIITTER 3. COLLECT OR (CASE) TO-3 package -JL-DZPL t-1 -i T D»M A e c D E Q H L H g u V iran MM 25.30 7.80 0.90 1.40 MAX 28.67 8:60 1 10 1,60 1092 546 :..;o 1675 1940 400 3000 430 1350 1705 19 $2 420 3020 450 N.I Sonii-Cdinluctors rcscrvo.s the right to change test cnmlitions. parameter limits and pucksige dimensions \\\\ithout mniee. Information tumishal by N,l Semi-Conductors is helie\\ed to he both accurate and reliable at the lime ol'eoini; 10 press. I lo\\\\e\\er. N.I Scini-Coiuluctors assumes no rcsponsihiliix lor an) errors or OMU'SMOMS discovered in its use. N.I Senii-Conduciors encourages cuslomers In \\erily that Jalasheels are eiinvnl be It ire placing orders. Quality Semi-Conducfors
Silicon NPN Power Transistor 2SC2981
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VcE(sat) VeE(sat) ICBO ICEO hpE-1 hpE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 10mA; RBE= °= lE=10mA;lc=0 lc= 2A; IB= 0.4A lc= 2A; IB= 0.4A VCB= 850V; IE=0 VCe= 650V; RBE=0 lc= 0.8A; VCE= 5V |c= 4A; VCE= 5V MIN 800 MAX 1.0 1.5 100 100 UNIT V V V V u A gA Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc= 4A, IB1= 0.8A; IB2= -2A 1.0 3.0 1.0 u s M s u s