2SC2981 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2981
DESCRIPTION
- With TO-3 package
- High voltatge
- High speed
APPLICATIONS
- For high voltatge ,high speed and power switching applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A PC Collector power dissipation T C=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2981 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=2.5A; IB=0.5A 1.0 V VBE(sat) Base-emitter saturation voltage I C=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current V CB=750V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 mA hFE-1 DC current gain I C=0.8A ; VCE=5V 15 hFE-2 DC current gain I C=4A ; VCE=5V 10
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2981 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)