2SA1481 SANYO
Document overview
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Technical content
Features
. . Fast switching speed + High breakdown voltage ( ): 28A1481 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vogo (-)60 v Collector to Emitter Voltage Vogg (-)50 Vv Emitter to Base Voltage Vepo (-)5 v Collector Current Ig (-)150 mA Collector Current(Pulse) Icp (-)400 mA Collector Dissipation Po 250 mW Junction Temperature Tj 150% Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo Vop=(-)40V,1p=0 (-)0.1 2A Emitter Cutoff Current Ippo Vape(-)4V,I¢=0 (-)0.1 #A DC Current Gain bpp Voge(-)6V,I¢=(~) Ima 100# 560* Gain-Bandwidth Product fp Voge (-)6V,Ig=(-) 1mA 100 MHz Output Capacitance Cob Voge (-)6V, f= 1MHz 2.7(4.0) pF C-E Saturation Voltage Vog(sat) Ig=(-)10mA,Ip=(-) 1mA (-)0.1 (-)0.4 Vv B-E Saturation Voltage VpR(sat) Ig=(-) 10mA, Ip=(-) 1mA (-)0.75 (=)1.1 Vv CB Breakdown Voltage Vepr)cpo I¢=(-) 102A, 1,20 (-)60 v C-E Breakdown Voltage Vopr)ceo Ic=(-) mA, Rgp=oo (-)50 v E-B Breakdwon Voltage — Vipnjeny Ig=(-) 102A, 1¢=0 (-)5 nd Delay Time tq See specified Test Circuit. 40 60 ns Rise Time ty " 80( 120) 130(230) ns Storage Time tstg . 230(190)450(700) ns Fall Time te . 160(240)250(390) ns *: The 2SA1481/2SC2960 are classified by 1mA hpp as follows: 100_E 200 160 F 320 [280 G 560] G_ 560 Switching Time Test Circuit Package Dimensions 2033 ~ (For. PNP, the polarity is reversed.) (unit: mm ) Satna 50 22 3 15. Jt mw, ae ee | our Pr SST [2 BW = 10s “Te2 13 SE Te |e duty = 2.5% fi peerresiee eet | gE) TeTpe ins gy SK 2k * | On 470 . B; Base on C: Collector E: Emitter £y Vece2ov SANYO: SPA
101 B1=-101 B2=1 C=10mA
Unit(Resistance : 0 , Capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4231MH,4097TA,TS No.829—1/4
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4 Sonat 3 STS
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” 2SA1481/2SC2960 oni —— ASO 1000 Aso 2SA14B1 [11 2862960 TEL , Loo ek ae [Ty Ss es we nO OO no ie | ++ } [ty ’ tie ++ + RQ xo, | TT [J 2, Yeh] TTS TT Pro HAR HHH AR LT ggtT DRC AN oe SANT Fj otf TINT | £ J tr Tre oN INET a Jt] TT Pe TT rt é x7 Ty a o 7 ‘e; 2 fer ~~ geolL | | Poot tot og LE ee 8 10 o I 8 10 IPS ett iT ity CNET gp NT ad gt Tr pir tte gd att iP tty Ty yr “ett ttt ttt 8 er “1.0 57490 2 3 5 749 2 3 8 Tag9 i T ) Collector to Emitter Voltage, Vgp - V Collector to Emitter Voltage,Vop - V
300 Pc - Ta
a L | pt Rye 0250 Dy 3 200} 3 NX SRN a N : IN 3 NI "020 40 = =~ ~«C«SODSC*aZSCMKOSCdKO Ambient Temperature,Ta - °C TNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MI Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.829-4/4