2SC2939 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, Otic.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2939
DESCRIPTION
- Collector-Emitter Sustaining Voltage- :, : VCEo(sus)= 400V(Min)
- Fast Switching Speed
APPLICATIONS
- Designed for use in high-voltage, high-speed, power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC-25"C Junction Temperature Storage Temperature Range VALUE 500 400 100 150 -55-150 UNIT V V V A A A W . , , - , 2 - - 3 PIN 1. BASE 2. COLLECT OR , , i 3. BETTER 123 10^247 package I. \\ ,t ,_ i, U. : . -„. .U \\ ip ' "< " ' ' ',* 1 ' ^ K
- • --H - G •• mm DIM MIN MAX A 19.80 20.20 B 15.40 15.80 C 4.90 5.10 D 0.90 1.10 E 1.40 1.60 F 1.90 2.10 G 10.80 11.00 H 2.40 2.60 J 0.50 0.70 K 19.50 20.50 P 3.90 4.10 Q 3.30 3.50 U 5.20 5.40 V 2.90 3.10 NI Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished hy N.I Semi-Cotuluctors is believed to he both accurate and reliable ;K the time ot'goinij to press. I lm\\e\\er, N,l Senii-C'oiuliieturs assumes no responsibility lor mi) errors or omissions discovered in its use. N.I Senii-C'onduclor"> enanirasie-i customers to verily that datasheets are current before placing orders. Qualify Semi-Conductors
Silicon NPN Power Transistor 2SC2939
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeEfsat) ICBO ICEO IEBO hFE fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage :> Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 0.1A; IB= 0 lc= 5A; IB= 1A lc= 5A; IB= 1A VCB= 500V; IE= 0 VCE= 320V; IB= 0 VEB= 7V; |c= 0 |c= 5A; VCE= 2V lc=0.5A; VCE=10V;f= 1MHz MIN 400 TYP. MAX 0.7 1.5 100 100 1.0 UNIT V V V nA uA mA MHz Switching times ton Utg tf Turn-on Time Storage Time Fall Time lc=5A, |B1=-|B2=1A 1.0 2.0 0.5 u s u s u s