2SC2939 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 DESCRIPTION ·
- With TO-247 package
- Switching power transistor
- High breakdown voltage
APPLICATIONS
- For switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A PD Total power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-247) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 400 V VCE(sat) Collector-emitter saturation voltage I C=5A ;IB=1A 1.0 V VBE(sat) Base-emitter saturation voltage I C=5A ;IB=1A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain I C=5A ; VCE=2V 10 50 hFE-2 DC current gain I C=1mA ; VCE=2V 5 fT Transition frequency I C=1A ; VCE=10V 20 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 PACKAGE OUTLINE Fig.2 Outline dimensions