2SC2937 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2937
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VcEOfsusr 400V(Min)
- Fast Switching speed
APPLICATIONS
- Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB IBM PC Tj T5tg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 500 400 150 -55-150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.56 UNIT "CM/ I 2 3 PIN 1. BASE 2.COLLECTOR 3. EMITTER TC-247 package O-, -6—•»• K *• -» H " G •»- DIM A B i"° D E F G H J K P Q U V mm MIN 19.80 15.40 4.90 0.90 1.40 1,90 10.80 2.40 0,50 19,50 3.90 3.30 5.20 2.90 MAX 20.20 15.80 5.10 1.10 1.60 2.10 11.00 2.60 0.70 30.50 4.10 3.50 5.40 3.10 NI Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice. Information rurnishcd by N.I Semi-Conductors is believed to he both accurate mid reliable nt the time of uoii ID press. I Inuever. N.I Semi-Coiiditelors assumes no responsibility lor any errors or omissions discovered in its use. N I Scini-C'oiuluclors eiKvui-ajies eustomei-s lo verily that ilatasheels are eunvnl be lore plnein>; orders. Qualihy Semi-Conductors
Silicon NPN Power Transistor 2SC2937
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(sat) ICBO ICEO IEBO hpE-1 hFE-2 fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 0.2A; IB- 0 |c= 4A; IB= 0.4A lc= 4A; IB= 0.4A At rated Voltage At rated VoltageXO.8 At rated Voltage lc= 4A; VCE= 2V lc= 8A; VCE= 2V IC=1A;VCE=10V MIN 400 TYP. MAX 0.7 1.5 100 100 1.0 UNIT V V V uA uA mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC=4A, IB1=-IB2=0.8A RL= 5 Q ; VBB2= 4V 1.0 3.0 0.7 n s H S H S