2SC2937 SAVANTIC

Document overview

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937

DESCRIPTION

  • ·With TO-247 package
  • Switching power transistor
  • High breakdown voltage

APPLICATIONS

  • For switching regulator applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A PD Total power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-247) and symbol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 400 V VCE(sat) Collector-emitter saturation voltage I C=4A ;IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage I C=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain I C=4A ; VCE=2V 10 50 hFE-2 DC current gain I C=1mA ; VCE=2V 5 fT Transition frequency I C=0.8A ; VCE=10V 20 MHz

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 PACKAGE OUTLINE Fig.2 Outline dimensions