2SC2934 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2934
DESCRIPTION
- With TO-126 package
- High VCEO
- Low COB
APPLICATIONS
- For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.2 A PC Collector power dissipation T C=25℃ 12.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2934 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=50mA ;IB=5m A 1.5 V V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V ICBO Collector cut-off current V CB=200V;IE=0 0.1 μA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 μA hFE DC current gain I C=50mA ; VCE=10V 50 300 fT Transition frequency I C=20mA ; VCE=20V 80 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2934 PACKAGE OUTLINE Fig.2 outline dimensions