2SC2914 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2914
DESCRIPTION
- With TO-3 package
- High breakdown voltage
- Fast switching speed.
- Wide area of safe operation
APPLICATIONS
- For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A PC Collector power dissipation T C=25℃ 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2914 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=10A; IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage I C=10A; IB=2A 2.0 V ICBO Collector cut-off current V CB=400V ;IE=0 100 μA IEBO Emitter cut-off current V EB=5V; IC=0 100 μA hFE DC current gain I C=5A ; VCE=5V 12
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2914 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)