2SC2913 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2913
DESCRIPTION
- With TO-66 package
- High breakdown voltage
- Fast switching speed.
- Wide area of safe operation
APPLICATIONS
- For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A IB Base current 3 A PT Total power dissipation T C=25 40 W Tj Junction temperature 175 Tstg Storage temperature -55~175 Fig.1 simplified outline (TO-66) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2913 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ; RBE=8 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=7A; IB=1.4A 1.0 V VBEsat Base-emitter saturation voltage I C=7A; IB=1.4A 2.0 V ICBO Collector cut-off current V CB=400V ;IE=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE DC current gain I C=3A ; VCE=5V 12
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2913 PACKAGE OUTLINE Fig.2 Outline dimensions