2SC2911 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC2911
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min)
- Good Linearity of hFE
- High Switching Speed
- Complement to Type 2SA1209
APPLICATIONS
- Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 140 mA ICP Collector Current-Pulse 200 mA PC Collector Power Dissipation @ TC=25℃ 10 W Collector Power Dissipation @ Ta=25℃ 1 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC2911
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.3 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 μ A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μ A hFE DC Current Gain IC= 10mA; VCE= 5V 100 400 fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 10V 150 MHz COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 3 pF hFE Classifications R S T 100-200 140-280 200-400