2SC2902 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2902
DESCRIPTION
- With TO-3 package
- High voltage ,high speed
APPLICATIONS
- Converters
- Inverters
- Switching regulators
- Motor controls PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 15 A ICM Collector current-Peak 30 A PC Collector power dissipation TC=25℃ 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2902 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ; IB=0; L=25mH 400 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 9 V VCEsat Collector-emitter saturation voltage I C=7.5A; IB=2.5A 1.0 V VBEsat Base-emitter saturation voltage I C=7.5A; IB=2.5A 1.5 V ICBO Collector cut-off current V CB=640V; IE=0 50 μA IEBO Emitter cut-off current V EB=9V; IC=0 50 μA hFE DC current gain I C=7.5A ; VCE=5V 10 35
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2902 PACKAGE OUTLINE Fig.2 Outline dimensions