2SC28844-Y

2SC2884_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2884 ■ Features

• Suitable for output stage of 1 watts amplifier
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1204 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 800 BaseCurrent IB 160 Collector Power Dissipation 500 (Note.1) 1000 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA PC mW Note.1:Mounted on a ceramic substrate (250 mm × 0.8 t)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1mA， IE= 0 35 Collector- emitter breakdown voltage VCEO Ic= 10mA， IB= 0 30 Emitter - base breakdown voltage VEBO IE= 1mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 35V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=20mA 0.5 Base - emitter saturation voltage VBE(sat) IC=500mA, IB=20mA 1.2 Base - emitter voltage VBE VCE= 1V, IC= 10mA 0.5 0.8 VCE= 1V, IC= 100mA 100 320 VCE= 1V, IC= 700mA 35 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 13 pF Transition frequency fT VCE= 5V, IC= 10mA 120 MHz V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SC2884-O 2SC28844-Y Range 100-200 160-320 Marking PO* PY*

www.kexin.com.cn2 Transistors NPN Transistors 2SC2884 ■ Typical Characterisitics Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) 0.2 0.4 0.6 1.0 0.8 20 40 60 80 100 120 140 160 1.2 (1) (2) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC DC current gain hFE Collector current IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage VBE (V) IC – VBE Collector current IC (mA) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (mA) 6 73 0 1 200 600 800 1000 IB = 1 mA Common emitter Ta = 25°C 400 2 4 5 7 8 6 1.6 1.2 0.8 0.4 0 200 400 600 800 Common emitter VCE = 1 V Ta = 100°C −25 25 500 3000 1000 300 100 0.3 3 1 10 100 30 300 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 100 ms* 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 10 ms* Collector current IC (mA) 1000 500 300 100 1 3 10 30 100 300 1000 Common emitter VCE = 1 V −25 Ta = 100°C 1 3 10 30 0.5 0.3 0.1 0.05 0.03 0.01 100 300 1000 −25 Ta = 100°C Common emitter IC/IB = 25