2SC2883-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Suitable for output stage of 3 watts amplifier
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1203-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 BaseCurrent IB 0.3 Collector Power Dissipation 500 (Note.1) 1000 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC mW Note.1:Mounted on a ceramic substrate (250 mm × 0.8 t)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1mA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 10mA， IB= 0 30 Emitter - base breakdown voltage VEBO IE= 1mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 30V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=30mA 2 Base - emitter saturation voltage VBE(sat) IC=1.5A, IB=30mA 1.2 Base - emitter voltage VBE VCE= 2V, IC= 500mA 1 DC current gain hFE VCE= 2V, IC= 500mA 100 320 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 40 pF Transition frequency fT VCE= 2V, IC= 500mA 120 MHz V uA V ■ Classification of hfe Type 2SC2883-O-HF 2SC2883-Y-HF Range 100-200 160-320 Marking GO* F GY* F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC2883-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Collector current IC (mA) hFE – IC DC current gain hFE Collector current IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage VBE (V) IC – VBE Collector current IC (mA) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (mA) 3 1.0 0.3 1 10 100 30 100 300 500 1000 3000 5000 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 10 ms* 100 ms* 1 s* 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 16 12 8 4 0 0.4 0.8 1.2 1.6 IB = 1 mA Common emitter Ta = 25°C 1.6 1.2 0.8 0.4 0 Common emitter VCE = 2 V Ta = 100°C 1.6 1.2 0.8 0.4 −25 25 Ta = 100°C Common emitter VCE = 2 V −25 0001 001 1 300 3 300 1000 500 3010 100 Ta = 100°C −25 Common emitter IC/IB = 50 100 10 3 0.03 30 300 1000 0.05 0.1 0.3 0.5 0.01 NPN Transistors 2SC2883-HF