2SC2882_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2882 ■ Features

  • Suitable for driver of 30 to 35 watts audio amplifier
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1202 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 400 BaseCurrent IB 80 Collector Power Dissipation 500 (Note.1) 1000 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA PC mW Note.1:Mounted on a ceramic substrate (250 mm × 0.8 t) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1mA， IE= 0 80 Collector- emitter breakdown voltage VCEO Ic= 10mA， IB= 0 80 Emitter - base breakdown voltage VEBO IE= 1mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 80V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=200 mA, IB=20mA 0.4 Base - emitter saturation voltage VBE(sat) IC=200 mA, IB=20mA 1.2 Base - emitter voltage VBE VCE= 2V, IC= 5mA 0.55 0.8 hFE(1) VCE= 2V, IC= 50mA 70 240 hFE(2) VCE= 2V, IC= 200mA 40 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 10 pF Transition frequency fT VCE= 10V, IC= 10mA 100 MHz V uA V DC current gain ■ Classification of hfe(1) Type 2SC2882-O 2SC2882-Y Range 70-140 120-240 Marking EO* EY*

www.kexin.com.cn2 Transistors NPN Transistors 2SC2882 ■ Typical Characterisitics Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) Collector current IC (mA) hFE – IC DC current gain hFE Collector current IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage VBE (V) IC – VBE Collector current IC (mA) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (mA) 10 6 4 2 0 100 200 300 400 IB = 0.5 mA Common emitter Ta = 25°C 3 Common emitter VCE = 2 V Ta = 100°C 500 400 300 200 100 −25 25 1000 300 100 500 3 10 30 100 300 1 Common emitter VCE = 2 V Ta = 100°C −25 100 10 1 0.03 30 300 0.05 0.1 0.3 0.5 Ta = 100°C −25 Common emitter IC/IB = 10 500 2000 1000 300 100 0.5 3 1 10 100 30 300 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 100 ms* 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 10 ms*