2SC2882_04 TOSHIBA

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Voltage Amplifier Applications

  • Suitable for driver of 30 to 35 watts audio amplifier
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1202 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 80 V Collector-emitter voltage V CEO 80 V Emitter-base voltage V EBO 5 V Collector current I C 400 mA Base current I B 80 mA PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current I EBO VEB = 5 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 80 ― ― V hFE (1) (Note 2) IE = 2 mA, IC = 50 mA 70 ― 240 DC current gain hFE (2) VCE = 2 V, IC = 200 mA 40 ― ― Collector-emitter saturation voltage V CE (sat) IC = 200 mA, IB = 20 mA ― ― 0.4 V Base-emitter voltage V BE VCE = 2 V, IC = 5 mA 0.55 ― 0.8 V Transition frequency f T VCE = 10 V, IC = 10 mA ― 100 ― MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz ― 10 ― pF Note 2: h FE(1) classification O: 70 to 140, Y: 120 to 240 Marking E Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator

Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C (W) 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink Collector-emitter voltage V CE (V) IC – VCE Collector current I C (mA) Collector current I C (mA) hFE – IC DC current gain h FE Collector current I C (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) Base-emitter voltage V BE (V) IC – VBE Collector current I C (mA) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (mA) 10 6 4 2 0 100 200 300 400 IB = 0.5 mA Common emitter Ta = 25°C 3 Common emitter VCE = 2 V Ta = 100°C 500 400 300 200 100 −25 25 1000 300 100 500 3 10 30 100 300 1 Common emitter VCE = 2 V Ta = 100°C −25 100 10 1 0.03 30 300 0.05 0.1 0.3 0.5 Ta = 100°C −25 Common emitter IC/IB = 10 500 2000 1000 300 100 0.5 3 1 10 100 30 300 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 100 ms* 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 10 ms*

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE