2SC2881-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Small Flat Package
  • High Transition Frequency
  • High Voltage
  • Complementary to 2SA1201-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100u A， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 10mA， IB= 0 120 Emitter - base breakdown voltage VEBO IE= 100uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 120V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 1 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1.2 Base - emitter voltage VBE VCE= 5V, IC= 0.5A 1 DC current gain hFE VCE= 5V, IC= 100mA 80 240 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 30 pF Transition frequency fT VCE= 5V, IC= 100mA 120 MHz V uA V ■ Classification of hfe Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 800 Base Current IB 160 Collector Power Dissipation PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA Type 2SC2881-O-HF 2SC2881-Y-HF Range 80-160 120-240 Marking CO* F CY* F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC2881-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) Collector current IC hFE – IC DC current gain hFE Collector current IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (mA) 16 12 8 4 0 200 400 600 800 IB = 1 mA Common emitter Ta = 25°C 1020 50 Common emitter VCE = 5 V Ta = 100°C 1.0 0.8 0.6 0.4 0.2 −25 25 1000 300 100 500 3 10 30 100 300 1000 Common emitter VCE = 5 V Ta = 100°C −25 100 10 3 0.03 30 300 1000 0.05 0.1 0.3 0.5 Ta = 100°C −25 Common emitter IC/IB = 10 500 3000 1000 300 100 0.3 3 1 10 100 30 300 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 100 ms * 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 10 ms* NPN Transistors 2SC2881-HF