2SC2880 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm asmax Lomax e High Voltage : VcEO=150V 1y7Max. 0.44005 © High Transition Frequency : fr=120MHz a | g| J ¢ Pc=0.8~2W (Mounted on Ceramic Substrate) 4 @ Small Flat Package 0.457988 — EB © Complementary to 25A1200 9a?9 | 41998 1st0. isto. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL 723 Collector-Base Voltage VcBo | pase Collector-Emitter Voltage VCEO 2. COLLECTOR (HEAT SINK) Emitter-Base Voltage VEBo 3. EMITTER Collector Current PW-MINI [Base Curent | | 10 | ma |YEDEC = Collector Power Dissipation ELAS SC-62 Collector Power Dissipation Pc (Note) TOSHIBA 2-5K1A Junction Temperature Weight : 0.05g Storage Temperature —55~150 . - Marking Note : Mounted on ceramic substrate (250mm? x 0.8t) Type Name Oo bre Rank lh Ao 4 ELECTRICAL CHARACTERISTICS (Ta = 25°C) roo CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Topo _|Vop=200V, ln=0 | — | — | oa] pa | [Bmitter Cut-off Current | Ippo |Vep=svio=o | = | = J oa | a | DC Current Gain hg (Note) | VoR=5V, I¢=10mA [7 | — | 20] | Collector-Emitter Saturation _ _ Voltage Vou (sat) |IO=10mA, Ip=1mA |= | = | 9 y Base-Emitter Voltage Vop=5V, I¢=30mA |= |=] 3a] v | VoR=30V, Ig=10mA | = | 120 | — [x | Collector Output Capacitance Vcp=10V, Ip=0, f=1MHz [ — | 35 | 5.0 | pF | Note : hpg Classification 0: 70~140, Y : 120~240 610916442 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss Of human ie, bodily Injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please Keep in mind the precautions and’ conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3
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| APR COLLROTOR CURRENT 1g. (nd) 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VcE (V) ; Vor (sat) — Ic hre - Ic z COMMON EMITTER. Lt sor 1 1 Tio Ee. ‘Ta=25C seo HTT) common saree ge ee A pe ecto Lr Sf esi PTS) eee z voll Le UR A ull BF I | Joo 2 roo er NL * na aH ee el alll 2 od ee AN Be Ub er PtH BB TT III Sst = BUT TEI TT ong EE lL FTA LT cousctncomy ip a 0.5 1 3 10 30 100 COLLECTOR CURRENT Ic (mA) Ic - VBE 50) sex , = TM TM counow exerren cy cael i ae Ee 1 toltg=10 ee a cee ee eee ee a cop | Leino ef fos TT pe este esse ace 2 Li T ETP yr ey Ty Bo eat soto Et Hi Te FA os LI 2 | es Gee iil aoe rT
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COLLECTOR CURRENT Ic (mA) BASE-EMITTER VOLTAGE Vpg (V) @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed Tost SOREORATION Jor any imfemgemers of nelecti! propery o gure raf She urd. ape wey ay fag fom 1 use, Ho license is grants @ The information contained herein is subject to change without notice oT OB
fr — Ic SAFE OPERATING AREA . mo] omer mes HF rT nt] = 300) = 25% > gem Ll apt ot & | N Hl Ic MAX. (CONTINUOUS) RoR o0mex =F] 2 en AH 2 sof CHIEN EHH fea 2 f-—jecormmamon NLL EET g soe g | | Ta=25°C NUUIN ET — itt i VE gad Not so Boe soaur owners SSE — PULSE Ta=25°C cS oo BLE IT eg intel 3° 3] CURVES MUST BE DERATED a IN TEMPERATURE. VcEo MAX. sLO 1 06 1 3 10 30 100 1 3 10 30 100 300 COLLECTOR CURRENT Ig (mA) COLLECTOR-EMITTER VOLTAGE Veg (V) Pc - Ta 1200; g sooo} tt | SUBSTRATE (250mm? x0.8t) g ' = PITT | ® NO HEAT SINK 2 wi OLl* ee “UTPN TTT B af PTENT go “Te TTT PN TTT TTT = gf DRO NT § “OOOO ES EN 2 eg ECE PSSA
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(LLL PSS 0 20 «40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) 1997-04-10 3/3