2SC2873Y TOSHIBA

Document overview

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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications

  • Low saturation voltage: V CE (sat) = 0.5 V (max) (IC = 1 A)
  • High-speed switching time: tstg = 1.0 μs (typ.)
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1213 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.4 A PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. t he application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) (Note 3) VCE = 2 V, IC = 0.5 A 70 ― 240 DC current gain hFE (2) V CE = 2 V, IC = 2.0 A 20 ― ― Collector-emitter saturation voltage V CE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage V BE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 120 ― MHz Collector output capacitance Cob V CB = 10 V, IE = 0, f = 1 MHz ― 30 ― pF Turn-on time t on ― 0.1 ― Storage time t stg ― 1.0 ― Switching time Fall time t f ― 0.1 ― μs Note 3: h FE (1) classification O: 70 to 140, Y: 120 to 240 Marking 30 Ω IB1 IB1 20 μs IB1 = −IB2 = 0.05 A, DUTY CYCLE ≤ 1% IB2 IB2 OUTPUT INPUT M Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator

Collector-emitter saturation voltage VCE (sat) (V) VBE (sat) – IC VCE (sat) – IC VCE – IC hFE – IC Collector current I C (A) VCE – IC VCE – IC Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C ( m A ) Base-emitter saturation voltage VBE (sat) (V) Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C ( m A ) Collector-emitter voltage V CE (V) Collector current I C ( m A ) DC current gain h FE 0.4 0.8 1.2 1.6 IB = 5 mA 20 10 Common emitter Ta = 25°C 0.4 0.8 1.2 1.6

10 IB = 5 mA 20 30

Ta = −55°C 100 10030 Common emitter VCE = 2 V 300 1000 300 Ta = 100°C −55 3000 500 1000 0.1 100 30 0.03 0.05 Common emitter IC/IB = 20 0.01 300 1000 0.3 Ta = 100°C −55 3000 0.5 10 100 300030 0.3 0.1 300 1000 0.5 Ta = −55°C 100 Common emitter IC/IB = 20 0.4 0.8 1.2 1.6 20 10 5 IB = 3 mA Common emitter Ta = 100°C

Collector current I C ( m A ) Collector-emitter voltage V CE (V) Collector current I C (A) Safe Operating Area IC – VBE Base-emitter voltage V BE (V) Ambient temperature Ta (°C) Collector power dissipation P C ( W ) 0.5 1.0 1.5 2.0 Common emitter VCE = 2 V Ta = 100°C −5525 PC – Ta 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 0.1 3 0.3 1 10 100 30 100 300 500 1000 3000 5000 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 10 ms* VCEO max 100 ms* 1 S* 1 ms* *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature Tested without a substrate

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.