2SC2873-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Small Flat Package
  • High Speed Switching Time
  • Low Collector-emitter saturation voltage
  • Complementary to 2SA1213-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 2 A Collector Power Dissipation PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100uA， IE= 0 50 Collector- emitter breakdown voltage VCEO Ic= 1mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 Base - emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 VCE= 2V, IC= 0.5A 70 240 VCE= 2V, IC= 2A 20 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 30 pF Transition frequency fT VCE= 2V, IC= 0.5A 120 MHz V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SC2873-O-HF 2SC2873-Y-HF Range 70-140 120-240 Marking MO F MY F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC2873-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 000100101 0111.0 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 100 1000 0001001011 100 1000 000100101 100 1000 0 2 4 6 8 10 12 14 16 100 200 300 400 500 600 700 800 900 1000 1000 VBEsat — — IC Ta=25 ℃ Ta=100 ℃ β=20 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 300 Cob Cib f=1MHz IE=0/IC=0 Ta=25 ℃ Cob/Cib — — VCB/VEB CAPACITANCE C (pF) REVERSE VOLTAGE V (V) PC — — Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ Ta=100 ℃ Ta=25 ℃ 300 VCE=2V IC — — VBE COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 2000 Ta=25 ℃ Ta=100 ℃ COMMON EMITTER VCE=2V 300 hFE — — IC COLLECTOR CURREMT IC (mA) DC CURRENT GAIN hFE β=20 300 VCEsat — — Ic Ta=25 ℃ Ta=100 ℃ COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT Ic (mA) COMMON EMITTER Ta=25 ℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic 4.5mA 4mA 3.5mA 3mA 2.5mA 2mA 1.5mA 1mA IB=500uA NPN Transistors 2SC2873-HF