2SC2859_15 KEXIN

Document overview

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2859 ■ Features

Excellent hFE Linearity: hFE(2)=25(min) (VCE=6V,IC=400mA)
Complementary to 2SA1182 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 Base Current IB 50 Collector Power Dissipation PC 150 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 35 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 30 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 35V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.1 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 Base - emitter voltage VBE VCE= 1V, IC= 100mA 0.8 1 hFE(1) VCE= 1V, IC= 100mA 70 400 VCE= 6V, IC= 400mA O 25 Y 40 G 70 Collector output capacitance Cob VCB= 6V, IE= 0,f=1MHz 7 pF Transition frequency fT VCE= 6V, IC= 20mA 300 MHz V uA V DC current gain hFE(2) ■ Classification of hfe(1) Type 2SC2859-O 2SC2859-Y 2SC2859-G Range 70-140 120-240 200-400 Marking WO WY WG 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors NPN Transistors 2SC2859 ■ Typical Characterisitics