2SC2831 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
- High VCBO
- High speed switching
APPLICATIONS
- For high speed switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC2831 800 VCBO Collector-base voltage 2SC2831A Open emitter 900 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 1.5 A ICM Collector current-peak 3 A IB Base current 0.5 A PC Collector power dissipation T C=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.2A; L=25mH 500 V VCE(sat) Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V VBE(sat) Base-emitter saturation voltage I C=1A; IB=0.2A 1.5 V 2SC2831 V CB=800V;IE=0 ICBO Collector cut-off current 2SC2831A V CB=900V;IE=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE-1 DC current gain I C=0.1A ; VCE=5V 15 hFE-2 DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=0.2A ; VCE=10V 2.5 MHz Switching times 2SC2831 1.0 ton Turn-on time 2SC2831A 1.2 µs tstg Storage time 3.0 µs 2SC2831 1.0 tf Fall time 2SC2831A IC=1A ; IB1=-IB2=-0.2A VCC=200V 1.2 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)