2SC2815 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2815 DESCRIPTION ·
- With TO-220C package
- High voltage;high speed
- Low collector saturation voltage
APPLICATIONS
- For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A Ptot Total power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2815 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=50mA ; IB=0 250 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.4A 1.2 V ICBO Collector cut-off current V CB=300V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=6.0V; IC=0 0.1 mA hFE DC current gain I C=2.5A ; VCE=5V 40
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2815 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)