2SA1179N_06 SANYO

Document overview

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Technical content

Features

  • Miniature package facilitates miniaturization in end products.
  • High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)55 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)150 mA Collector Current (Pulse) I CP (- -)300 mA Base Current I B (- -)30 mA Collector Dissipation P C 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)35V, IE=0A (- -)0.1 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0A (- -)0.1 µA DC Current Gain h FE VCE =(- -)6V, IC =(- -)1mA 200 400 Gain-Bandwidth Product f T 2SC2812N : VCE =6V, IC =1mA 100 MHz 2SA1179N : VCE =- -6V, IC =- -10mA (180) MHz Output Capacitance Cob V CB =(- -)6V, f=1MHz (4.0)3.0 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)50mA, IB=(- -)5mA (- -0.15)0.1 (- -)0.5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)50mA, IB=(- -)5mA (- -)1.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -)55 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0A (- -)5 V Marking : 2SA1179N : M / 2SC2812N : L * : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws: Rank 6 hFE 200 to 400 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637

Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications

No.7198-2/4 Package Dimensions unit : mm (typ) 7053-001 1 : Base 2 : Emitter 3 : Collector SANYO : CPA 2.93 1.9 0.95 0.45

1.3 MAX

0.13 0 to 0.1 1.0 1.3 2.4 0.55 0.55

0.2 MIN

--4 --12 --8 --16 --80 --40 --120 --200 --160 --240 IT04197 IT04196 0 1 02 03 04 05 0 IT04198 120 160 200 240 IB =0µA --5µA --10µA --15µA --20µA --25µA --30µA --35µA--40µA--45µA--50µA 2SA1179N 2SA1179N V CE = --6V 2SC2812N V CE =6V IB =0µA5µA 10µA 15µA 20µA 25µA 30µA 35µA 40µA 45µA 50µA 2SC2812N Ta=75 --25 Ta=75 --25 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IC -- VBE

No.7198-3/4 IT04205 --1.0 --1023 5 7 --10023 5 7 23 5 --0.1 IT04203 23 5 757 2 3 57 --10 --100--1.0 1.0 2SA1179N f=1MHz IT04204 23 5 757 2 3 57 10 1001.0 1.0 2SC2812N f=1MHz IT04206 1.0 10 23 5 7 10023 5 7 23 5 0.1 0.01 2SA1179N IC / IB = --10 2SC2812N IC / IB =10 Collector Current, IC -- mA VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- mA VCE (sat) -- IC Collector-to-Base V oltage, VCB -- V Cob -- VCBCob -- VCB Output Capacitance, Cob -- pF 100 IT04201 IT04199 1000 100 2SA1179N V CE = --6V 2SA1179N V CE = --6V Ta=75°C --25°C 25°C IT04200 57320.1 57321.0 573210 32100 1000 100 2SC2812N V CE =6V Ta=75°C --25°C 25°C 57231.0 572310 23100 100 IT04202 2SC2812N V CE =6V Gain-Bandwidth Product, fT -- MHz fT -- IC f T -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA DC Current Gain, hFE hFE -- IC Collector Current, IC -- mACollector Current, IC -- mA DC Current Gain, hFE hFE -- IC

No.7198-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS IT04207 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 0.01 0.001 IT04208 0 20 40 60 80 100 120 140 160 100 150 200 250 0.1 DC operation ICP =0.3A IC =0.15A 100µs 10µs 1ms10ms 100ms Ta=25°C Mounted on a glass epoxy board (205 305 1.6mm) For PNP, the minus sign is omitted. Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice.