2SC2809 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2809
DESCRIPTION
- With TO-3PN package
- High speed switching
- High breakdown voltage
- Wide area of safe operation
APPLICATIONS
- For power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-Peak 4 A PC Collector power dissipation T C=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2809 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 300 V V(BR)CBO Emitter-base breakdown voltage I C=1mA ;IE=0 300 V VCE(sat) Collector-emitter saturation voltage I C=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage I C=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current V CB=300V IE=0 100 µA IEBO Emitter cut-off current V EB=6V; IC=0 100 µA hFE DC current gain I C=0.3A ; VCE=4V 50 fT Transition frequency I C=0.3A ; VCE=12V 20 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2809 PACKAGE OUTLINE Fig.2 outline dimensions