2SC2788 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788
DESCRIPTION
- With TO-3PN package
- High breakdown voltage
- Fast switching speed
- Wide area of safe operation
APPLICATIONS
- For switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 3 A Ta=25℃ 2.5 PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=4A ;IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage I C=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current V CB=400V ;IE=0 100 μA IEBO Emitter cut-off current V EB=5V; IC=0 100 μA hFE-1 DC current gain I C=0.8A ; VCE=5V 15 50 hFE -2 DC current gain I C=4A ; VCE=5V 8 fT Transition frequency I C=0.8A ; VCE=10V 20 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788 PACKAGE OUTLINE Fig.2 outline dimensions