2SC2780 KEXIN

Document overview

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2780 ■ Features

Collector Current Capability IC=50mA
Collector Emitter Voltage VCEO=140V
Complementary to 2SA1173 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 SOT-89 Unit:mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO 140 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 Collector Current - Pluse (Note.1) ICP 100 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA Note.1 : PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe(2) Type 2SC2780-M 2SC2780-L 2SC2780-K Range 90-180 135-270 200-400 Marking NM NL NK Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 140 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 140 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 140 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB=2mA 0.6 Base - emitter saturation voltage VBE(sat) IC=20 mA, IB=2mA 1 Base - emitter voltage VBE VCE= 10V, IC= 10mA 0.65 0.75 VCE= 10V, IC= 1mA 50 VCE= 10V, IC= 10mA 90 400 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 2.3 pF Transition frequency fT VCE= 10V, IE= -10mA 120 MHz DC current gain V uA hFE V

www.kexin.com.cn2 Transistors NPN Transistors 2SC2780 ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SC2780 ■ Typical Characterisitics