2SC2761 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761
DESCRIPTION
- With TO-3 package
- High voltage ,high speed
APPLICATIONS
- Converters
- Inverters
- Switching regulators
- Motor controls PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A IB Base current 6 A PC Collector power dissipation T C=25 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1m A ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage I E=1m A ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=20A; IB=4A 1.5 V VBE(sat) Base-emitter saturation voltage I C=20A; IB=4A 1.7 V ICBO Collector cut-off current V CB=450V IE=0 100 µA IEBO Emitter cut-off current V EB=7V; IC=0 100 µA hFE DC current gain I C=15A ; VCE=2V 8
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761 PACKAGE OUTLINE Fig.2 Outline dimensions