2SC2751 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2751 UtSl^Klh-l IUN

  • Collector-Emitter Sustaining Voltage- : VcEO(susr 400V(Min)
  • High Current Capability
  • High Power Dissipation

APPLICATIONS

  • Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Tc-25t: Junction Temperature Storage Temperature Range VALUE 500 400 7.5 120 150 -55-150 UNIT V V V A A A W C B •-< ' I" "t'1' • 3
  • f *'l\\ PIN 1.BASE . .'V; '* I/ 2. COLLECTOR
  • - |H ', 3. EMITTER , -. "^ TO-3PN package [j Q i 1 / i ' / I H - ' | t K f B — * - C *- v
  • * --R DIM A B L D E h G h j K L N R s b Y mm MM 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3,20 0.595 20.00 1.90 10.89 4.90 3,35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2,100 6.10 10.10 G •*• *L NJ Stfini-CimdiMors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished by N.I Scini-Condtietors is believed to be both nccunitc and reliable at the time of gum-- to press, llowexer. N.I Seiiii-CniidiicUirs assumes no responsibility for an> errors or omissions discovered in its u>e.' N.I Seiiii-t'liiidiiclivrs enciiiira.nes eiislomers to verily th:H dataslieets are eiinvnl befoiv pliiciny oixlers. Qualify Seini-Conductors

Silicon NPN Power Transistor 2SC2751

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VCBO VcE(sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= 30mA; IB=0 |B=1mA, lc=0 IC=10A;IB=2A lc=10A; IB=2A VCB= 450V; IE 0 VEB= 5V; lc 0 lc= 2A; VCE= 5V lc= 5A; VCE= 5V IC=10A;VCE=5V MIN 400 450 TYP. MAX 1.0 1.5 100 UNIT V V V V U A MA Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC=10A, IB1=-IB2=2A, Vcc* !50V;RL=15n 1.0 2.5 0.7 u s U s M s

  • hpE-1 Classifications N 15-30 R 20-40 30-60 Y 40-80